HI1-0539-5 데이터 시트보기 (PDF) - Intersil
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HI1-0539-5 Datasheet PDF : 11 Pages
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HI-539
Die Characteristics
DIE DIMENSIONS:
92 mils x 100 mils
METALLIZATION:
Type: AlCu
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (NOTE):
-VSUPPLY
PASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5kÅ ±1kÅ
Silox Thickness: 12kÅ ±2.0kÅ
WORST CASE CURRENT DENSITY:
2.54 x 105 A/cm2 at 20mA
TRANSISTOR COUNT:
236
PROCESS:
CMOS-DI
NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -VSUPPLY potential.
Metallization Mask Layout
HI-539
V-
EN
A0
A1
GND
V+
IN1A
IN2A
IN1B
IN2B
IN3A
IN4A
OUTA
OUTB
IN4B IN3B
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