STPS2060C 데이터 시트보기 (PDF) - STMicroelectronics

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STPS2060C

High voltage power Schottky rectifier

STMicroelectronics 

Characteristics

STPS2060C

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

IR(mA)

1.E+01

Tj=125°C

1.E+00

Tj=100°C

Figure 8.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

C(pF)

10000

F=1MHz

VOSC=30mVRMS

Tj=25°C

1.E-01

Tj=75°C

1000

Tj=50°C

1.E-02

Tj=25°C

1.E-03

VR(V)

VR(V)

100

0

10

20

30

40

50

60

1

10

100

Figure 9.

Forward voltage drop versus

forward current (maximum values,

per diode)

IFM(A)

1000

Tj=125°C

100

10

VFM(V)

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

4/7

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