TGA9083-EEU 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TGA9083-EEU Datasheet PDF : 9 Pages
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RECOMMENDED
ASSEMBLY DIAGRAM
USING ACTIVE GATE
BIAS CIRCUIT
-5 V
100pF
100pF
.01uF
On-chip wire bond
A
B
EC
D
RF Input
TGA9083-EEU
Vd
100pF
RF Output
100pF
100pF
Vd
Bond using three (four at RFOUT) 1.0-mil diameter, 25 to 30-mil length gold bond wires at RF Input and RF Output for optimum
performance. Bond wires connected to the RF Output pad should be equal distance from center line as indicated in dra wing.
Close placement of exter nal components is essential to stability.
Drain bias ( VD) voltage should be connected to both sides of MMIC.
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TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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