2N3906BU(2011) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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2N3906BU Datasheet PDF : 6 Pages
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Typical Performance Characteristics
Typical Pulsed Current Gain
vs Collector Current
250
V CE = 1 .0V
125 °C
200
150
25 °C
100
- 40 °C
50
0.1 0.2 0.5 1 2
5 10 20 50 100
I C - COLLECTOR CURRE NT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
ββ = 10
0.25
0.2
0.15
25 °C
0.1
0.05
0
1
125°C
- 40 °C
10
100 200
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1 ββ = 10
0.8
0.6
- 40 °C
25 °C
125 °C
0.4
0.2
0
1
10
100 200
I C - COLLECTOR CURRE NT (mA)
Collector-Cutoff Current
vs Ambient Temperature
100
VCB= 25V
10
1
0.1
0.01
25
50
75
100
125
TA - AMBIE NT TEMP ERATURE (° C)
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
0.6
25 °C
125 °C
0.4
0.2
V CE = 1V
0
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
C obo
8
6
4
C ibo
2
0
0.1
1
10
REVERSE BIAS VOLTAGE (V)
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
3
www.fairchildsemi.com
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