BCW72 데이터 시트보기 (PDF) - NXP Semiconductors.
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BCW72 Datasheet PDF : 6 Pages
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NXP Semiconductors
NPN general purpose transistors
Product data sheet
BCW71; BCW72
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BCW71
BCW72
DC current gain
BCW71
BCW72
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 100 °C
IC = 0; VEB = 5 V
IC = 10 μA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 2 mA; VCE = 5 V
IE = Ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
100 nA
10
μA
100 μA
−
90
−
−
150 −
110 −
220
200 −
450
−
120 250 mV
−
210 −
mV
−
750 −
mV
−
850 −
mV
550 −
700 mV
−
2.5 −
pF
100 −
−
MHz
−
−
10
dB
1999 Apr 19
3
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