C4446 데이터 시트보기 (PDF) - SANYO -> Panasonic

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C4446

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

Output Capacitance

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

2SA1687/2SC4446

Symbol

Conditions

VCE(sat) IC=(–)50mA, IB=(–)5mA

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

Cob

IC=(–)50mA, IB=(–)5mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

VCB=(–)6V, f=1MHz

ton

See specified Test Circuit

tstg

See specified Test Circuit

tf

See specified Test Circuit

Ratings

Unit

min typ max

0.15 (–)0.5 V

(–0.25)

V

(–)0.85 (–)1.2 V

(–)60

V

(–)50

V

(–)15

V

(3.5)

pF

2.2

pF

50

ns

(460)

ns

590

ns

(60)

ns

110

ns

Unit (resistance : Ω, capacitance : F)

No.3013-2/5

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