FP108 데이터 시트보기 (PDF) - SANYO -> Panasonic

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FP108

TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode

SANYO -> Panasonic 

FP107

Continued from preceding page.

Electrical Characteristics at Ta=25˚C

.Parameter

[TR]

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

[SBD]

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

Symbol

Conditons

ICBO

IEBO

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

VCB=–12V, IE=0

VEB=–6V, IC=0

VCE=–2V, IC=–0.5A

VCE=–2V, IC=–3A

VCE=–2V, IC=–0.3A

VCE=–10V, f=1MHz

IC=–1.5A, IB=–30mA

IC=–1.5A, IB=–30mA

IC=–10µA, IE=0

IC=–1mA, RBE=∞

IE=–10µA, IC=0

See specified Test Circuit

See specified Test Circuit

tf

See specified Test Circuit

VR

VF

IR

C

trr

Rthj-a

IR=400µA

IF=500mA

VR=6V

VR=10V, f=1MHz

IF=IR=100mA, See specified Test Circuit

Mounted on ceramic board (250mm2×0.8mm)

Switching Time Test Circuit

(TR)

(SBD)

Ratings

Unit

min

typ

max

140

70

400

26

–0.22

–0.9

–15

–11

–7

25

200

10

–0.1 µA

–0.1 µA

560

MHz

pF

–0.4 V

–1.2 V

V

V

V

ns

ns

ns

11

V

0.4 0.45 V

200 µA

45

pF

50

ns

120

˚C/W

No.5413-2/4

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