TEMD5000 데이터 시트보기 (PDF) - Vishay Semiconductors

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TEMD5000

Silicon PIN Photodiode

Vishay Semiconductors 

Silicon PIN Photodiode

TEMD5100

Vishay Semiconductors

Description

TEMD5100 is a high speed and high sensitive PIN

photodiode in a miniature flat plastic package. Its top

view construction makes it ideal as a low cost replace-

ment of TO-5 devices in many applications.

The epoxy package itself is an IR filter, spectrally

matched to GaAs or GaAs on GaAlAs IR emitters

(λp = 950 nm). The large active area combined with a

flat case gives a high sensitivity at a wide viewing

angle.

12775

Features

• Large radiant sensitive area (A = 7.5 mm2)

• Wide angle of half sensitivity ϕ = ± 65 °

• High photo sensitivity

• Fast response times

• Small junction capacitance

• Plastic case with IR filter (λ = 950 nm)

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

High speed photo detector

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse Voltage

Power Dissipation

Junction Temperature

Tamb ≤ 25 °C

Storage Temperature Range

Soldering Temperature

t≤3s

Thermal Resistance Junction/

Ambient

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Breakdown Voltage

IR = 100 µA, E = 0

Reverse Dark Current

VR = 10 V, E = 0

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

VR = 3 V, f = 1 MHz, E = 0

Symbol

Value

Unit

VR

60

V

PV

215

mW

Tj

100

°C

Tstg

- 55 to + 100

°C

Tsd

260

°C

RthJA

350

K/W

Symbol

Min

Typ.

Max

Unit

V(BR)

60

V

Iro

2

30

nA

CD

70

pF

CD

25

40

pF

Document Number 81553

Rev. 1.4, 08-Mar-05

www.vishay.com

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