BSP170E6327 데이터 시트보기 (PDF) - Siemens AG
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BSP170E6327 Datasheet PDF : 8 Pages
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BSP 170
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = -1.7 A, VGS = -10 V
0.9
Ω
RDS (on) 0.7
0.6
0.5
98%
0.4
typ
0.3
0.2
0.1
0.0
-60
-20
20
60
100 °C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = -1 mA
-4.6
V
-4.0
VGS(th) -3.6
-3.2
98%
typ
-2.8
-2.4
2%
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 4
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
-10 1
pF
C
10 3
A
IF
-10 0
Ciss
10 2
Coss
Crss
10 1
0
-5 -10 -15 -20 -25 -30 V -40
VDS
Semiconductor Group
7
-10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
-10 -2
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VSD
22/05/1997
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