IRLML5103
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.029 V/°C Reference to 25°C, ID = -1mA
RDS(ON)
Static Drain-to-Source On-Resistance
0.60
1.0
Ω
VGS = -10V, ID = -0.60A
VGS = -4.5V, ID = -0.30A
VGS(th)
Gate Threshold Voltage
-1.0 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.44 S VDS = -10V, ID = -0.30A
IDSS
Drain-to-Source Leakage Current
-1.0
-25
µA VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-100 nA VGS = -20V
100
VGS = 20V
Qg
Total Gate Charge
3.4 5.1
ID = -0.60A
Qgs
Gate-to-Source Charge
0.52 0.78 nC VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
1.1 1.7
VGS = -10V, See Fig. 6 and 9
td(on)
Turn-On Delay Time
10
VDD = -15V
tr
td(off)
Rise Time
Turn-Off Delay Time
8.2
23
ns
ID = -0.60A
RG = 6.2Ω
tf
Fall Time
16
RD = 25Ω, See Fig. 10
Ciss
Input Capacitance
75
VGS = 0V
Coss
Output Capacitance
37 pF VDS = -25V
Crss
Reverse Transfer Capacitance
18
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
-0.54
-4.8
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
D
G
S
-1.2 V TJ = 25°C, IS = -0.60A, VGS = 0V
26 39
20 30
ns TJ = 25°C, IF = -0.60A
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ -0.60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, Surface mounted on FR-4 board, t ≤ 5sec.
TJ ≤ 150°C