NTE2380 데이터 시트보기 (PDF) - NTE Electronics

부품명

상세내역

일치하는 목록

NTE2380

Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Switching Characteristics (Cont’d) (Note 1)

Total Gate Charge

NTE2380

NTE2381

Qg VGS = 10V, VDS = 400V,

ID = Rated ID

– 12 15 ns

– 20 25 ns

Gate–Source Charge

NTE2380

Qgs

NTE2381

–

6

– ns

– 10 – ns

Gate–Drain Charge

NTE2380

Qgd

NTE2381

–

6

– ns

– 10 – ns

Source Drain Diode Characteristics (Note 1)

Forward On–Voltage

NTE2380

NTE2381

VSD

IS = Rated ID, VGS = 0

–

– 1.6 V

– 1.8 2.5 V

Forward Turn–On Time

ton

Reverse Recovery Time

trr

NTE2380

Limited by stray inductance

– 500 – ns

NTE2381

– 120 – ns

Internal Package Inductance

Internal Drain Inductance

Ld Measured from contact screw on – 3.5 – nH

tab to center of die

Measured from the drain lead

– 4.5 – nH

0.25” from package to center of die

Internal Source Inductance

Ls Measured from the source lead

– 7.5 – nH

0.25” from package to center of pad

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.420 (10.67)

Max

.110 (2.79)

.147 (3.75) Dia Max

.500

(12.7)

Max

.070 (1.78) Max

Gate

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Source

Drain/Tab

Share Link: