2SJ132-Z 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SJ132-Z Datasheet PDF : 7 Pages
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2SJ132, 2SJ132-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Drain cutoff current
Gate cutoff current
Gate cutoff voltage
Forward transfer
admittance
Drain to source on-state
resistance
Drain to source on-state
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IDSS
IGSS
VGS(off)
yts
Conditions
VDS = −30 V, VGS = 0
VGS = +–20 V, VDS = 0
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −1.0 A
RDS(on)1 VGS = −10 V, ID = −1.0 A
RDS(on)2 VGS = −4 V, ID = −0.8 A
Ciss
Coss
Crss
VDS = −10 V, VGS = 0 V
f = 1 MHz
td(on)
tt
td(off)
tf
ID = −1.0 A, VGS(on) = −10 V
VDD ≅ −15 V, RL = 50 Ω,
Rin = 10 Ω
MIN.
TYP.
MAX.
Unit
−10
µA
+–100
nA
−1.0
−2.0
−3.0
V
1.0
1.8
S
0.25
0.4
Ω
0.4
0.6
Ω
730
pF
180
pF
45
pF
30
ns
30
ns
110
ns
40
ns
SWITCHING TIME TEST CIRCUIT, TEST CONDITION (RESISTANCE LOAD)
2
Data Sheet D16192EJ2V0DS
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