AIC1811BCV 데이터 시트보기 (PDF) - Analog Intergrations

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AIC1811BCV

One-Cell Lithium-Ion Battery Protection IC

Analog Intergrations 

AIC1811

detection circuitry. Charging is determined to be in

progress if the voltage between CS and GND is

below charge detection threshold voltage (VCH).

DESIGN GUIDE

Selection of External Control MOSFETs

Because the overcurrent protection voltage is

preset, the threshold current for overcurrent

detection is determined by the turn-on resistance

of the discharge control MOSFET M1. The turn-on

resistance of the external control MOSFETs can

be determined by the equation: RON=VOIP/ (2 x IT)

(IT is the overcurrent threshold current). For

example, if the overcurrent threshold current IT is

designed to be 3A, the turn-on resistance of the

external control MOSFETs must be 33mΩ. Users

should be aware that turn-on resistance of the

MOSFET changes with temperature variation due

to heat dissipation. It changes with the voltage

between gate and source as well. (Turn-on

resistance of a MOSFET increases as the voltage

between gate and source decreases). Once the

turn-on resistance of the external MOSFET

changes, the overcurrent threshold current will

change accordingly.

Suppressing the Ripple and Disturbance

from Charger

To suppress the ripple and disturbance from

charger, connecting R1, C1 to VCC pin is

recommended.

Protection at CS pin

R2 is used for latch-up protection when charger is

connected under overdischarge condition and

overstress protection at reverse connecting of a

charger. Larger value of R2 reduces the charger

leakage current in overcharge mode, but possibly

disables the charge detection function after

overdischarge. Resistance of 51KΩ is

recommended.

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