C3390 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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C3390 Datasheet PDF : 5 Pages
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2SC3390
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
55
V
50
V
5
V
100
mA
300
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
V(BR)CBO
55
—
voltage
Collector to emitter breakdown V(BR)CEO 50
—
voltage
Emitter to base breakdown
V(BR)EBO
5
—
voltage
Collector cutoff current
I CBO
—
—
Emitter cutoff current
I EBO
—
—
DC current transfer ratio
hFE*1
100 —
Base to emitter voltage
VBE
—
—
Collector to emitter saturation VCE(sat) —
—
voltage
Gain bandwidth product
fT
—
200
Collector output capacitance Cob
—
—
Noise figure
NF
—
1.0
Note: 1. The 2SC3390 is grouped by hFE as follows.
B
C
100 to 200 160 to 320
Max
—
—
—
0.5
0.5
320
0.75
0.2
—
3.5
5.0
Unit
V
V
V
µA
µA
V
V
MHz
pF
dB
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 18 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
VCE = 12 V, IC = 2 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA,
Rg = 1 kΩ, f = 1 kHz
See characteristic curves of 2SC458(LG).
2
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