E13003(2002) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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E13003 Datasheet PDF : 4 Pages
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KSE13003
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
3
0.75
20
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
IEBO
hFE
VCE(sat)
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector Emitter Saturation Voltage
VBE(sat)
*Base Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
IC = 5mA, IB = 0
VEB = 9V, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC =1A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 1.5A, IB = 0.5A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.1A
VCC =125V, IC = 1A
IB1 = 0.2A, IB2 = - 0.2A
RL = 125Ω
Min.
400
8
5
4
Typ.
21
Max.
10
40
Units
V
µA
0.5
V
1
V
3
V
1
V
1.2
V
pF
MHz
1.1
µs
4.0
µs
0.7
µs
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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