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PBSS4350SS Datasheet PDF - Nexperia B.V. All rights reserved

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PBSS4350SS
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA
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PBSS4350SS Datasheet PDF : PBSS4350SS pdf     
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General description
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications
■ Dual low power switches (e.g. motors, fans)
■ Automotive

 

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