PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.
NPN complement: PBSS2540E.
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
■ DC-to-DC conversion
■ MOSFET gate driving
■ Motor control
■ Charging circuits
■ Low power switches (e.g. motors, fans)