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BUK762R7-30B Datasheet PDF - NXP Semiconductors.

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BUK762R7-30B
NXP
NXP Semiconductors. NXP
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BUK762R7-30B Datasheet PDF : BUK762R7-30B pdf     
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General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits
◾ Low conduction losses due to low
   on-state resistance
◾ Q101 compliant
◾ Suitable for standard level gate drive
   sources
◾ Suitable for thermally demanding
   environments due to 175 °C rating

Applications
◾ 12 V loads
◾ Automotive systems
◾ General purpose power switching
◾ Motors, lamps and solenoids

 

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상세내역
PDF
제조사
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
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N-channel TrenchMOS standard level FET
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N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET ( Rev : 2011 )
NXP Semiconductors.

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