datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  NXP  >>> BLS7G2933S-150 PDF

BLS7G2933S-150 Datasheet PDF - NXP Semiconductors.

부품명
상세내역
제조사
BLS7G2933S-150
NXP
NXP Semiconductors. NXP
Other PDF
  no available.
PDF
BLS7G2933S-150 Datasheet PDF : BLS7G2933S-150 pdf     
BLS7G2933S-150 image

General description
150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Features and benefits
■ Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
   of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
   ◆ Output power = 150 W
   ◆ Power gain = 13.5 dB
   ◆ Efficiency = 47 %
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (2.9 GHz to 3.3 GHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
   range

 

Share Link: 

English 简体中文 日本語 русский español

All Rights Reserved© datasheetbank.com [ 개인정보 보호정책 ] [ 요청 데이타시트 ][ 제휴문의 ]