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BLL1214-250 Datasheet PDF - NXP Semiconductors.

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BLL1214-250
NXP
NXP Semiconductors. NXP
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BLL1214-250 Datasheet PDF : BLL1214-250 pdf     
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General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.

Features
■ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
   of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %:
   ◆ Output power = 250 W
   ◆ Power gain = 13 dB
   ◆ Efficiency = 47 %
■ High power gain
■ Easy power control
■ Excellent ruggedness
■ Source on mounting base eliminates DC isolators, reducing common mode
   inductance.

Applications
■ L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range

 

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