F7103Q 데이터 시트보기 (PDF) - International Rectifier

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F7103Q

HEXFET® Power MOSFET

International Rectifier 

IRF7103Q

60

 TOP

ID

1.2A

2.5A

48

BOTTOM 3.0A

15V

36

VDS

L

D R IV E R

24

12

0

25

50

75

100 125 150 175

Starting TJ , Junction Temperature ( °C)

Fig 16a. Maximum Avalanche Energy

Vs. Drain Current

RG

20V

tp

D .U .T

IA S

0 .0 1Ω

+

- VD D

A

Fig 16c. Unclamped Inductive Test Circuit

V (B R)DSS

tp

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

-VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 17. Gate Charge Test Circuit

www.irf.com

IAS

Fig 16d. Unclamped Inductive Waveforms

QG

VGS

QGS

QGD

VG

Charge

Fig 18. Basic Gate Charge Waveform

7

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