TIP42CL-X-TQ2-R 데이터 시트보기 (PDF) - Unisonic Technologies

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TIP42CL-X-TQ2-R

PNP EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

TIP42C

PNP PLANAR TRANSISTOR

 ABSOLUTE MAXIMUM RATING (unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

-100

V

Collector to Emitter Voltage

Emitter-Base Voltage

VCEO

VEBO

-100

V

-5

V

Collector Current (DC)

Collector Current (Pulse)

IC

-6

A

IC

-10

A

Base Current

IB

TO-220/TO-263

-2

A

65

Collector Dissipation (TC=25°C) TO-220F

PC

22

W

TO-252

20

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TC=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Emitter Breakdown Voltage (Note)

Collector Cutoff Current

BVCEO IC=-30mA, IB=0

ICEO VCE=-60V, IB=0

Collector Cutoff Current

Emitter Cutoff Current

ICES VCE=-100V, VEB=0

IEBO VBE=-5V, IC=0

Collector-Emitter Saturation Voltage (Note)

Base-Emitter on Voltage (Note)

VCE(SAT) IC=-6A, IB=-600mA

VBE(ON) VCE=-4V, IC=-6A,

DC Current Gain (Note)

hFE1 VCE=-4V, IC=-300mA

hFE2 VCE=-4V, IC=-3A

Current Gain Bandwidth Product

fT

Note: Pulse Test: PW≤300μs, Duty Cycle≤2%

VCE=-10V, IC=-500mA, f=1MHz

 CLASSIFICATION OF hFE2

RANK

RANGE

A

15~30

B

28~48

MIN TYP MAX UNIT

-100

V

-0.7 mA

-400 μA

-1 mA

-1.5 V

-2.0 V

30

15

75

3

MHz

C

45~75

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R203-007.G

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