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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

C3503 데이터 시트보기 (PDF) - Inchange Semiconductor

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C3503
Iscsemi
Inchange Semiconductor Iscsemi
C3503 Datasheet PDF : 2 Pages
1 2
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3503
DESCRIPTION
·Low Collector Saturation Voltage
·High breakdown voltage
·Silicon NPN epitaxial planar transistor
·Small reverse transfer capacitance and excellent high
frequency characteristic
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For high definition CRT display ,video output
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Tc=25
TJ
Junction Temperature
0.1
A
7
W
150
Tstg
Storage Temperature Range
-55~150
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