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R6030ENZ4 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6030ENZ4
Nch 600V 30A Power MOSFET
ROHM Semiconductor
R6030ENZ4 Datasheet PDF : 14 Pages
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R6030ENZ4
Datasheet
l
Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Source current
Pulsed source current
I
S*1
T
C
= 25
℃
I
SP*2
-
-
30
A
-
-
80
A
Source-Drain voltage
V
SD*5
V
GS
= 0V, I
S
= 30A
-
- 1.5 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t
rr*5
Q
rr*5
I
S
= 30A
di/dt = 100A/μs
I
rr*5
- 660 -
ns
-
15
-
μC
-
45
-
A
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4/11
20190527 - Rev.002
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