M12L128324A-2M 데이터 시트보기 (PDF) - [Elite Semiconductor Memory Technology Inc.

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M12L128324A-2M

1M x 32 Bit x 4 Banks Synchronous DRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

M12L128324A (2M)

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on any pin relative to VSS

VIN, VOUT

-1.0 ~ 4.6

V

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

V

Storage temperature

TSTG

-55 ~ +150

°C

Power dissipation

PD

1

W

Short circuit current

IOS

50

mA

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITION

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C )

Parameter

Symbol

Min

Supply voltage

VDD, VDDQ

3.0

Input logic high voltage

VIH

2.0

Input logic low voltage

VIL

-0.3

Output logic high voltage

VOH

2.4

Output logic low voltage

VOL

-

Input leakage current

IIL

-5

Output leakage current

IOL

-5

Typ

Max

3.3

3.6

3.0

VDD+0.3

0

0.8

-

-

-

0.4

-

5

-

5

Note:

1. VIH(max) = 4.6V AC for pulse width ≤ 10ns acceptable.

2. VIL(min) = -1.5V AC for pulse width ≤ 10ns acceptable.

3. Any input 0V ≤ VIN ≤ VDD, all other pins are not under test = 0V.

4. Dout is disabled, 0V ≤ VOUT ≤ VDD.

Unit

V

V

V

V

V

μA

μA

Note

1

2

IOH = -2mA

IOL = 2mA

3

4

CAPACITANCE (VDD = 3.3V, TA = 25 °C , f = 1MHz)

Parameter

Symbol

Min

Max

Unit

Input capacitance (A0 ~ A11, BA0 ~ BA1)

CIN1

2

4

pF

Input capacitance

CIN2

2

(CLK, CKE, CS , RAS , CAS , WE & DQM)

4

pF

Data input/output capacitance (DQ0 ~ DQ31)

COUT

2

5

pF

Elite Semiconductor Memory Technology Inc.

Publication Date: Mar. 2011

Revision: 1.2

3/44

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