BB501M 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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BB501M Datasheet PDF : 13 Pages
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BB501M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
ID
Channel power dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Drain to source breakdown V(BR)DSS
6
—
voltage
Gate1 to source breakdown V(BR)G1SS
+6
—
voltage
Gate2 to source breakdown V(BR)G2SS
+6
—
voltage
Gate1 to source cutoff current IG1SS
—
—
Gate2 to source cutoff current IG2SS
—
—
Gate1 to source cutoff voltage VG1S(off)
0.5
0.7
Gate2 to source cutoff voltage VG2S(off)
0.5
0.7
Drain current
I D(op)
7
10
Forward transfer admittance |yfs|
19
24
Ratings
6
+6
–0
+6
–0
20
150
150
–55 to +150
Max Unit
—
V
—
V
—
V
+100 nA
+100 nA
1.0
V
1.0
V
13
mA
29
mS
Input capacitance
c iss
Output capacitance
c oss
Reverse transfer capacitance crss
Power gain
PG
Noise figure
NF
1.4
1.7
2.0
pF
0.7
1.1
1.5
pF
—
0.019 0.04 pF
17
21.5 —
dB
—
1.85 2.4
dB
Unit
V
V
V
mA
mW
°C
°C
Test Conditions
ID = 200µA
VG1S = VG2S = 0
IG1 = +10µA
VG2S = VDS = 0
IG2 = +10µA
VG1S = VDS = 0
VG1S = +5V
VG2S = VDS = 0
VG2S = +5V
VG1S = VDS = 0
VDS = 5V, VG2S = 4V
ID = 100µA
VDS = 5V, VG1S = 5V
ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 47kΩ
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 47kΩ, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 47kΩ
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 47kΩ
f = 900MHz
2
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