2SJ546 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SJ546

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

2SJ546

Power vs. Temperature Derating

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

1000

Maximum Safe Operation Area

300

100

10 µs

30

10

3

1

0.3

PW

DC Opera=ti1on0

Operation in

this area is

limited by R DS(on)

100

1 ms

µs

(mTcs=(12s5h°Cot))

0.1 Ta = 25 °C

0.1 0.3 1 3 10 30 100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–10 V –6 V

–20

–4 V

–16

Pulse Test

–12

–3.5 V

–8

–3 V

–4

VGS = –2.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–20

V DS = –10 V

Pulse Test

–16

–12

–8

Tc = 75°C

25°C

–4

–25°C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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