A935 데이터 시트보기 (PDF) - WEJ ELECTRONIC CO.

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A935

TRANSISTOR (PNP)

WEJ ELECTRONIC CO. 

RoHS

2SA935

2SA935 TRANSISTOR (PNP)

D FEATURES

Power dissipation

T PCM : 0.75 W (Tamb=25℃)

.,L Collector current

ICM : -0.7 A

Collector-base voltage

O V(BR)CBO : -80 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-92L

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

N Collector-base breakdown voltage

O Collector-emitter breakdown voltage

Emitter-base breakdown voltage

R Collector cut-off current

T Emitter cut-off current

C DC current gain

E Collector-emitter saturation voltage

L Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

fT

Cob

Test conditions

Ic=-50µA, IE=0

Ic=-2mA, IB=0

IE=-50µA, IC=0

VCB=-50V, IE=0

VEB=-4V, IC=0

VCE=-3V, IC=-100mA

IC=-500mA, IB=-50mA

VCE=-10V, IC=-50mA

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-80

V

-80

V

-5

V

-0.5 µA

-0.5 µA

82

390

-0.4 V

100

MHz

20

pF

E CLASSIFICATION OF hFE(1)

J Rank

ERange

WMarking

P

82-180

Q

120-270

R

180-390

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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