IRG4BC20MD 데이터 시트보기 (PDF) - International Rectifier

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IRG4BC20MD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC20MD

+Vge

90% Vge

80%

of Vce

Same type

device as

D .U .T .

430µF

D .U .T .

Ic 10% Vce

td(off)

Vce

90% Ic

Ic

5% Ic

tf

∫ t1+5µS

Eoff = Vce ic dt

t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

10% +Vg

G ATE VO LTA G E D .U .T.

+Vg

Vce

10% Ic

Vcc

90% Ic

td (o n )

5% Vce

tr

t1

DUT VOLTAGE

AND CURRENT

Ipk

Ic

∫ t2

E on = Vce ie dt

t1

t2

trr

Ic

tx

10% Vcc

Vpk

Irr

DIO DE REVE RSE

RECOVERY ENERGY

t3

trr

∫ Q rr = id dt

tx

10% Irr

Vcc

DIODE RECOVERY

W AVEFORMS

∫ t4

Erec = Vd id dt

t3

t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

8

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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