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MGP21N80E Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an Energy–efficient,
ESD protected, and short circuit rugged device.
• Industry Standard TO–220 Package
• High Speed: Eoff = 65 mJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
• Low On–Voltage 2.15 V typical at 20 A, 125°C
• Robust High Voltage Termination
C
• ESD Protection Gate–Emitter Zener Diodes
G
E
Order this document
by MGP21N60E/D
MGP21N60E
IGBT IN TO–220
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
G
C
E
CASE 221A–06
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
±20
Vdc
31
Adc
21
42
Apk
140
Watts
1.12
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
RθJC
RθJA
TL
0.9
65
260
10 lbfSin (1.13 NSm)
°C/W
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
1
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