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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

ST110S04P1V 데이터 시트보기 (PDF) - International Rectifier

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ST110S04P1V
IR
International Rectifier IR
ST110S04P1V Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ST110S Series
Bulletin I25167 rev. C 03/03
100
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Rec ommended load line for
<=30%rated di/ dt : 10V, 10ohms
10 tr<=1 µs
(a)
(b)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
1
0.1
0.001
VGD
IGD
Device: ST110SSeries
(1) (2) (3) (4)
Frequenc y Limited by PG(AV)
0.01
0.1
1
10
100
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
8
www.irf.com

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