IRFB9N65A 데이터 시트보기 (PDF) - International Rectifier
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IRFB9N65A Datasheet PDF : 8 Pages
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PD - 91815C
SMPS MOSFET IRFB9N65A
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
HEXFET® Power MOSFET
VDSS
650V
RDS(on) max
0.93Ω
ID
8.5A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
8.5
5.4
21
167
1.3
± 30
2.8
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Single Transistor Flyback
l Single Transistor Forward
Notes through
are on page 8
www.irf.com
1
6/21/00
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