IRFP064V 데이터 시트보기 (PDF) - International Rectifier
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IRFP064V Datasheet PDF : 8 Pages
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IRFP064V
12000
10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 130A
16
VDS = 48V
VDS = 30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100 150 200 250 300
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
1
TJ = 25 ° C
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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