IRFD024 데이터 시트보기 (PDF) - International Rectifier

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IRFD024

HEXFET® Power MOSFET

International Rectifier 

PD - 9.699B

IRFD024

Absolute Maximum Ratings

Parameter

ID @ TA = 25°C

ID @ TA = 100°C

IDM

PD @TA = 25°C

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

c Pulsed Drain Current

Power Dissipation

VGS

EAS

dv/dt

TJ

TSTG

Linear Derating Factor

Gate-to-Source Voltage

d Single Pulse Avalanche Energy

e Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10sec

Thermal Resistance

Parameter

RθJA

Junction-to-Ambient

Max.

2.5

1.8

20

1.3

0.0083

1.6

91

4.5

-55 to + 175

Units

A

W

W/°C

V

mJ

V/ns

°C

Typ.

–––

Max.

120

Units

°C/W

1/28/04

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