IRFR4105TRL 데이터 시트보기 (PDF) - International Rectifier
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IRFR4105TRL Datasheet PDF : 10 Pages
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l Ultra Low On-Resistance
l Surface Mount (IRFR4105)
l Straight Lead (IRFU4105)
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
PD - 91302C
IRFR/U4105
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.045Ω
ID = 27A
S
D-PAK
T O -252 AA
I-P A K
T O -25 1AA
Max.
27
19
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
1
5/11/98
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