IRFR220N 데이터 시트보기 (PDF) - International Rectifier

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IRFR220N

SMPS MOSFET

International Rectifier 

IRFR/U220N

10000

1000

100

10

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 2.9A

16

12

VDS = 160V

VDS = 100V

VDS = 40V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

5

10

15

20

25

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

TJ = 175° C

1

TJ = 25° C

0.1

0.4

V GS = 0 V

0.6

0.8

1.0

1.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

10

100us

1

1ms

TC = 25 °C

TJ = 175°C

Single Pulse

0.1

1

10

10ms

100

VDS, Drain-to-Source Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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