IRFB59N10D 데이터 시트보기 (PDF) - International Rectifier

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IRFB59N10D

HEXFET® Power MOSFET

International Rectifier 

IRFB/IRFS/IRFSL59N10D

VDS

L

RG

20V

tp

D .U .T

IA S

0 .0 1Ω

15V

D R IV E R

+

- VD D

A

Fig 12a. Unclamped Inductive Test Circuit

V (BR)DSS

tp

1200

900

ID

TOP

14.5A

25.0A

BOTTOM 35.4A

600

300

0

25

50

75

100 125 150 175

Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

QG

VGS

QGS

QGD

VG

Charge

Fig 13a. Basic Gate Charge Waveform

6

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

-VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

www.irf.com

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