IRF9Z24NSTRR 데이터 시트보기 (PDF) - International Rectifier

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IRF9Z24NSTRR

HEXFET® Power MOSFET

International Rectifier 

IRF9Z24NS/L

12

9

6

3

0

A

25

50

75

100

125

150

175

TC , C ase Tem perature (°C )

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

VDS

VGS

RG

RD

D.U.T.

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

-

+ VDD

Fig 10a. Switching Time Test Circuit

VGS

10%

td(on) tr

td(off) tf

90%

VDS

Fig 10b. Switching Time Waveforms

D = 0.50

1

0 .20

0.10

0.05

0.02

0 .0 1

0.1

S IN G LE P U L S E

(THE R MA L R ES PO NS E )

0.01

0.00001

0.0001

PD M

N otes:

1. D uty factor D = t1 / t 2

t1

t2

2. P eak TJ = P D M x Z thJ C + T C

0.001

0.01

0.1

t1 , Rectangular Pulse D uration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

A

1

5

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