IRF5806(2000) 데이터 시트보기 (PDF) - International Rectifier

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IRF5806
(Rev.:2000)

HEXFET® Power MOSFET

International Rectifier 

IRF5806

1000

800

600

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

400

200

Coss

Crss

0

1

10

100

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10

ID = -4.0A

8

VDS = -16V

6

4

2

0

0

4

8

12

16

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

TJ = 150° C

1

TJ = 25 ° C

0.1

0.2

V GS = 0 V

0.6

1.0

1.4

-VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

10

100us

1ms

1

10ms

TC = 25 °C

TJ = 150°C

Single Pulse

0.1

0.1

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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