IRF5850(2000) 데이터 시트보기 (PDF) - International Rectifier
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IRF5850 Datasheet PDF : 9 Pages
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IRF5850
500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400
Coss = Cds + Cgd
Ciss
300
200
100
Coss
Crss
0
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = -2.2A
8
VDS =-16V
VDS =-10V
6
4
2
0
0
2
4
6
8
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150° C
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100us
1ms
1
10ms
TA = 25 °C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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