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T15M256A 데이터 시트보기 (PDF) - Taiwan Memory Technology

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T15M256A
TMT
Taiwan Memory Technology TMT
T15M256A Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
tm TE
CH
T15M256A
AC CHARACTERISTICS
(Vcc =5V ± 5%, Vss = 0V, Ta = 0 to 70°C)
(1) READ CYCLE
PARAMETER
SYM.
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
tRC
tAA
tACS
tAOE
tCLZ*
tOLZ
tCHZ*
tOHZ
tOH
T15M256A-35
MIN. MAX.
35
-
-
35
-
35
-
25
3
-
0
-
-
25
-
25
3
-
* These parameters are sampled but not 100% tested.
T15M256A-70
MIN. MAX.
70
-
-
70
-
70
-
35
3
-
0
-
-
35
-
35
3
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2)WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
SYM.
tWC
tCW
tAW
tAS
tWP
tWR
tDW
tDH
tWHZ
tOHZ
tOW
T15M256A-35
MIN. MAX.
35
-
30
-
30
-
0
-
25
-
0
-
20
-
0
-
-
10
-
10
0
-
* These parameters are sampled but not 100% tested.
T15M256A-70
MIN. MAX.
70
-
60
-
60
-
0
-
50
-
0
-
30
-
0
-
-
25
-
25
0
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Taiwan Memory Technology, Inc. reserves the right P. 4
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:C

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