RF305B6S 데이터 시트보기 (PDF) - ROHM Semiconductor

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RF305B6S

Super Fast Recovery Diode

ROHM Semiconductor 

Super Fast Recovery Diode

RF305B6S

Series

Standard Fast Recovery

Applications

General rectification

Dimensions (Unit : mm)

C0.5

6.5±0.2

5.1±0.2

　　　 0.1

2.3±0.2

　　　 0.1

0.5±0.1

Features

1)Low forward voltage

2)Low switching loss

Construction

Silicon epitaxial planer

0.9

（1） （2）

①

（3）

0.75

0.65±0.1

2.3±0.2 2.3±0.2

ROHM : CPD

JEITA : SC-63

① Manufacture Date

0.5±0.1

1.0±0.2

Taping dimensions (Unit : mm)

2.0±0.05

4.0±0.1

8.0±0.1

Data Sheet

Land size figure (Unit : mm)

6.0

1.6

1.6

CPD 2.3 2.3

Structure

φ1.55±0.1

　　　　　 0

0.4±0.1

TL

6.8±0.1

8.0±0.1

φ3.0±0.1

Absolute maximum ratings (Tc=25C)

Parameter

Symbol

Repetitive peak reverse voltage

VRM

Reverse voltage

VR

Average rectified forward current

Io

Forward current surge peak

Junction temperature

Storage temperature

IFSM

Tj

Tstg

Conditions

Limits

Unit

Duty≤0.5

600

V

Direct voltage

600

V

60Hz half sin wave,

resistive load

Tc=83°C

3.0

A

60Hz half sin wave, Non-repetitive

one cycle peak value, Tj=25°C

50

A

150

C

55 to 150 C

Electrical characteristics (Tj=25C)

Parameter

Symbol

Conditions

Min.

Forward voltage

Reverse current

Reverse recovery time

Thermal resistance

VF

IF=3.0A

－

IR

VR=600V

－

trr

IF=0.5A,IR=1A,Irr=0.25×IR

－

Rth(j-l)

junction to lead

－

Typ.

Max.

1.3

1.7

0.04

10

22

30

－

12

2.7±0.2

Unit

V

μA

ns

°C/W

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1/4

2011.10 - Rev.A

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