MCR100-6 데이터 시트보기 (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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MCR100-6 Datasheet PDF : 5 Pages
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MCR100-6
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Symbol
Characteristics
IDRM/IRRM
off-state leakage current
(V AK= V DRM/V RRM)
VTM
Forward “On” voltage (ITM = 1A tp = 380μs)
Gate trigger current (continuous dc)
IGT
(VAK = 7 Vdc, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc)
VGT
(VAK = 7 Vdc, RL = 100 Ω)
Min Typ. Max Unit
Tc=25℃
Tc=125℃
-
-
1
μA
100
(Note2.1) -
(Note2.2)
15
1.2 1.7
V
-
200 μA
(Note2.2)
-
-
0.8
V
VGD
dv/dt
IH
Gate threshold Voltage
Voltage Rate of Rise Off-State Voltage
(VD=0.67VDRM ;exponential waveform)
Holding Current (VD = 12 V; IGT = 0.5 mA)
(Note2.1) 0.2
-
TJ=125℃
500 800
Gate open circuit
25
-
2
-
V
-
V/μs
5
mA
IL
latching current (VD = 12 V; IGT = 0.5 mA)
Rd
Dynamic resistance
TJ=125℃
-
2
6
mA
-
-
245 mΩ
Note 2.1 Pulse width≤1.0ms,duty cycle≤1%
2.2 RGK current is not included in measurement.
2/5
Steady, keep you advance
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