IRGIB7B60KD 데이터 시트보기 (PDF) - International Rectifier

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IRGIB7B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

20

18

16

14

12

10

8

6

4

2

0

5

ICE = 4.0A

ICE = 8.0A

ICE = 16A

10

15

20

VGE (V)

Fig. 9 - Typical VCE vs. VGE

TJ = -40°C

IRGIB7B60KD

20

18

16

14

12

10

8

6

4

2

0

5

ICE = 4.0A

ICE = 8.0A

ICE = 16A

10

15

20

VGE (V)

Fig. 10 - Typical VCE vs. VGE

TJ = 25°C

20

18

16

14

12

10

8

6

4

2

0

5

ICE = 4.0A

ICE = 8.0A

ICE = 16A

10

15

20

VGE (V)

Fig. 11 - Typical VCE vs. VGE

TJ = 150°C

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100

80

TJ = 25°C

60

TJ = 150°C

40

20

TJ = 150°C

TJ = 25°C

0

0

5

10

15

20

VGE (V)

Fig. 12 - Typ. Transfer Characteristics

VCE = 360V; tp = 10µs

5

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