BC635 데이터 시트보기 (PDF) - DC COMPONENTS
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BC635 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC635
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Emitter Voltage
VCES
45
V
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
1
W
+150
oC
-55 to +150 oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
2o Typ
2o Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Emitter Breakdown Voltage
BVCEO
45
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
Base-Emitter On Voltage(1)
VBE(on)
-
-
0.1
-
0.5
-
1
DC Current Gain(1)
hFE1
25
hFE2
40
-
-
-
250
hFE3
25
-
-
Transition Frequency
fT
-
100
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
µA
µA
V
V
-
-
-
MHz
Test Conditions
IC=10mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
IC=500mA, IB=50mA
IC=500mA, VCE=2V
IC=5mA, VCE=2V
IC=150mA, VCE=2V
IC=500mA, VCE=2V
IC=10mA, VCE=5V, f=50MHz
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