BC184 데이터 시트보기 (PDF) - DC COMPONENTS
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BC184 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC184
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
45
V
30
V
6
V
100
mA
350
mW
+150
oC
-55 to +150 oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 45
Collector-Emitter Breakdown Voltage BVCEO 30
Emitter-Base Breakdown Volatge
BVEBO
6
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1) VCE(sat)1
-
VCE(sat)2
-
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
Base-Emitter On Voltage(1)
VBE(on)1
VBE(on)2
-
0.55
DC Current Gain(1)
VBE(on)3
-
hFE
240
Transition Frequency
fT
150
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
15
-
15
0.07 0.25
0.2
0.6
-
1.2
0.5
-
0.62 0.7
0.83
-
-
900
-
-
-
5
Classification of hFE
Rank
B
Range
240~500
C
450~900
Unit
V
V
V
nA
nA
V
V
V
V
V
V
-
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=2mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=0.1mA, VCE=5V
IC=2mA, VCE=5V
IC=100mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0
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