DG406BP25 데이터 시트보기 (PDF) - Dynex Semiconductor
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DG406BP25 Datasheet PDF : 19 Pages
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4.0
Conditions: Tj = 125˚C, IFGM = 30A,
CS = 1.0µF, VD = 2000V,
RS = 10 Ohms, dIT/dt = 300A/µs
3.0
tr
DG406BP25
2.0
td
1.0
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
Fig.13 Delay time & rise time vs turn-on current
5.0
Conditions:
Tj = 125˚C, IT = 1000A,
CS = 1.0µF,
RS = 10 Ohms,
4.0
dI/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 2000V
3.0
tr
2.0
td
1.0
0
0
20
40
60
80
Peak forward gate current IFGM - (A)
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9/19
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