IRG4BC20UPBF(2004) 데이터 시트보기 (PDF) - International Rectifier
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IRG4BC20UPBF
(Rev.:2004)
(Rev.:2004)
International Rectifier
IRG4BC20UPBF Datasheet PDF : 9 Pages
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IRG4BC20UPbF
1000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
800
Coes = Cce + C gc
Cies
600
Coes
400
Cres
200
0
A
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 6.5A
16
12
8
4
0
A
0
5
10
15
20
25
30
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.23
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 6.5A
0.22
0.21
0.20
0
A
10
20
30
40
50
60
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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