TIM1011-2L 데이터 시트보기 (PDF) - Toshiba

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TIM1011-2L

MICROWAVE POWER GaAs FET

Toshiba 

TIM1011-2L

POWER DISSIPATION VS. CASE TEMPERATURE

25

20

15

10

5

0

0

40

80

120

160

200

Tc (℃)

IM3IMv3s.vOs.UOTUPTUPTUPTOPWOWERERCCHHAARRAACCTTEERRIISTICS

-10

f = 11.7 GHz

VDS = 9 V

IDS ≅ 1.0 A

-20 ∆f= 5MHz

-30

-40

-50

-60

17

19

21

23

25

27

29

Po (dBm), Single Carrie

Po(dBm), Single Carrier

4

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