TGA4508 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TGA4508 Datasheet PDF : 11 Pages
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TGA4508
TABLE IV
THERMAL INFORMATION
PARAMETER
θJC Thermal Resistance
(channel to backside of
carrier)
TEST
CONDITIONS
Vd = 3 V
ID = 40 mA
Pdiss = 0.12 W
TCH
θJC
Tm
(oC) (°C/W) (HRS)
85
125
3E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature. Worst case condition with no RF applied,
100% of DC power is dissipated.
Median Lifetime (Tm) vs. Channel Temperature
4
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